Consiglio Nazionale delle Ricerche-ISMN (IT) NUSOD contributions 2025 - Lodz WA04 — Tight-binding model for mixed perovskites2023 - Turin MP02 — Metadata definition and database implementation for searchable Raman-spectroscopy data handling - (POSTER)TuC01 — Phonon transport and thermoelectric properties of two-dimensional materials - (INVITED)TuD02 — Empirical Tight-Binding Simulations for Nonuniform Disordered GaAsSb Alloy2021 - Virtual edition NM03 — Tight binding simulations of tetragonal MAPbI3 domains within orthorhombic phase2020 - Virtual edition MM06 — Tight binding parameterization through particle swarm optimization algorithm2019 - Ottawa TuA1 — Modeling of Halide Perovskite/Ti3C2TX MXenes Solar Cells2018 - Hong Kong ThA3 — Effect of alloy non-uniformity on optical properties of InGaN bulk and quantum wells2017 - Copenhagen MD1 — Simulations of 3-dimensional ferroelectric domains in perovskite solar cells based on MAPbI3TuD3 — A valence force field-Monte Carlo algorithm for quantum dot growth modeling2014 - Mallorca MA2 — Realistic models of quantum-dot heterostructuresMB2 — Effect of alloy fluctuations in InGaN/GaN quantum wells on optical emission strength2013 - Vancouver ThC2 — Modelling of GaAs quantum dot embedded in a polymorph AlGaAs nanowireWD5 — Simulation of Random Alloy Effects in InGaN/GaN LED s2011 - Rome ThB5 — Atomistic simulation of InGaN/GaN quantum disk LEDsWD1 — Strain and piezoelectric effects in quantum-dot structures - (INVITED)WD6 — Comparison of continuum and atomistic methods for the analysis of InAs/GaAs quantum dots2009 - Gwangju TuD2 — Coupling Atomistic and Finite Element Approaches for the Simulation of Optoelectronic Devices2008 - Nottingham TuA1 — TiberCAD: Towards multiscale simulation of optoelectronic devices - (INVITED)
