The 50th Research Institute of China Electronics Technology Group Corporation (CN) NUSOD contributions 2016 - Sydney MP02 — Study on Noise Behaviors of Epitaxial Si:P Blocked-Impurity-Band Detectors - (POSTER)MP10 — Design consideration for ion-implanted planar GaAs blocked-impurity-band detectors - (POSTER)2015 - Taipei MP01 — Opto-electrical characteristics of Si-based blocked-impurity-band detector: Experiment and simulation - (POSTER)MP15 — The Dependence of Dark Current on Temperature in Epitaxial Si:P BIB Detector - (POSTER)2014 - Mallorca MP02 — Electrical characteristics simulation of GaAs-based blocked-impurity-band detector for THz application - (POSTER)MP03 — Photoresponse simulation for separate absorption and multiplication GaN/AlGaN avalanche photodiode - (POSTER)
