Shanghai Institute of Technical Physics (CN) · University of Science and Technology (CN) NUSOD contributions 2016 - Sydney TuD4 — Origin and optimization of large dark current increase in InGaAs/InP APD2015 - Taipei MP10 — Light enhancement by Metal-Insulator-Metal Plasmonic Focusing Cavity - (POSTER)2013 - Vancouver ThB6 — Numerical Analysis of Multiplication layer for InGaAs/InP Single Photon Avalanche Diodes2010 - Atlanta MP11 — Numerical Analysis of Single Photon Avalanche Photodiodes With Improved Structure - (POSTER)2008 - Nottingham WA5 — Theoretical Study of Separate Absorption, Grading, Charge, and Multiplication InGaAs/InP Single Photon Avalanche Diode
