Shanghai Institute of Technical Physics (CN) NUSOD contributions 2012 - Shanghai TuP09 — Electro-optical characteristics for AlGaN solar-blind p-i-n photodiode: Experiment and simulation - (POSTER)2011 - Rome MP8 — Electro-optical characteristics of separate absorption and multiplication GaN avalanche photodiode - (POSTER)2010 - Atlanta TuA4 — Photoresponse simulation of visible blind GaN/AlGaN p-i-n photodiode2009 - Gwangju WA2 — Dark Current Simulation of GaN/AlGaN p-i-n Avalanche Photodiode
