The 50th Research Institute of China Electronics Technology Group Corporation (CN)
NUSOD contributions
2022 - Virtual edition
2021 - Virtual edition
2020 - Virtual edition
- D07 — Numerical simulation on the dependence of carrier transport characteristics on the thickness of the absorbing layer for GaAs-based blocked impurity band (BIB) terahertz detectors - (POSTER)
- D08 — Numerical simulation on the effect of the thickness of the absorbing layer on the spectral response characteristics for GaAs-based blocked impurity band (BIB) terahertz detectors - (POSTER)
2019 - Ottawa
- TuP06 — Numerical simulation on the effect of operation temperature on noise characteristics for GaAs-based blocked impurity band (BIB) far-infrared detectors - (POSTER)
- TuP13 — Numerical simulation on temperature-dependent spectral responsivity characteristics for GaAs-based blocked-impurity-band (BIB) far-infrared detectors - (POSTER)
- TuP17 — Simulation of ion implantation and annealing for Si-based blocked-impurity-band detectors - (POSTER)
2018 - Hong Kong
2017 - Copenhagen
2016 - Sydney
2015 - Taipei
- MP01 — Opto-electrical characteristics of Si-based blocked-impurity-band detector: Experiment and simulation - (POSTER)
- MP14 — Infrared tunable dual-band polarization filter based on compound asymmetrical cross-shaped resonator - (POSTER)
- MP15 — The Dependence of Dark Current on Temperature in Epitaxial Si:P BIB Detector - (POSTER)