Gwangju Institute of Science and Technology (KR)
NUSOD contributions
2010 - Atlanta
2009 - Gwangju
- MP4 — Theoretical analrysis of polarization characteristics of InGaN/GaN LEDs with photonic crystals - (POSTER)
- ThA3 — High efficient 635nm resonant-cavity light-emitting diodes with modified electron stopped layers
- ThA4 — Optical properties of type-II InGaN/GaAsN/GaN quantum wells light-emitting diodes
- ThB3 — An Integrated 4-f-Imaging-Based Reconfigurable Optical Add-drop Multiplexer Employing an Opto-VLSI Processor
- TuA2 — Electroabsorptive Double Ring Resonators for Wavelength Switching Applications
- WA3 — Optimum Design of InGaP/GaAs Dual-Junction Solar Cells
- WB2 — Si3N4 / SiO2 Passivation Layer on InP for Optimization of the 1.55um MQW FP laser Performance
- WC4 — Simulation of antireflective subwavelength grating structures for optical device applications
2008 - Nottingham
NUSOD roles
- Program Committee — 2007–2008, 2010–2011